PULSED OPERATION OF InGaAsP/InGaP DOUBLE HETEROSTRUCTURE VISIBLE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.

被引：0
|
作者：
Iwamoto, Takashi [1 ]
Mori, Kazuo [1 ]
Mizuta, Masashi [1 ]
Kukimoto, Hiroshi [1 ]
机构：
[1] Tokyo Inst of Technology, Imaging, Science & Engineering Lab,, Yokohama, Jpn, Tokyo Inst of Technology, Imaging Science & Engineering Lab, Yokohama, Jpn
来源：
| 1985年 / 24期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
8
引用
收藏
相关论文
共 50 条
  • [41] INTERDIFFUSION OF IN, GA, AND AL IN EPITAXIAL INGAP AND INGAALP GROWN ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    MEEHAN, K
    DABKOWSKI, FP
    GAVRILOVIC, P
    WILLIAMS, JE
    STUTIUS, W
    HSIEH, KC
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S22 - S22
  • [42] ALGAAS-GAAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - A REVIEW
    DUPUIS, RD
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 213 - 222
  • [43] X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition
    Nittono, T
    Hyuga, F
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) : 2607 - 2610
  • [44] Heavily Sn-doped n-type InGaP grown by metalorganic chemical vapor deposition
    Nakamura, K
    Fuyuki, T
    Matsunami, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12A): : 7158 - 7159
  • [45] EFFECT OF GROWTH TEMPERATURE ON THE PHOTOLUMINESCENT SPECTRA OF UNDOPED AlGaAs GROWN BY METALORGANIC-CHEMICAL VAPOR DEPOSITION.
    Mohammed, Khalid
    Merz, James L.
    Kasemset, Dumrong
    Materials Letters, 1983, 2 (01) : 35 - 38
  • [46] InP/InGaAs heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition
    Kurishima, Kenji, 1600, (30):
  • [47] Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices
    Zhang, XB
    Ryou, JH
    Dupuis, RD
    Walter, G
    Holonyak, N
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (04) : 705 - 710
  • [48] ALINAS/GAINAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    JALALI, B
    NOTTENBURG, RN
    HOBSON, WS
    CHEN, YK
    FULLOWAN, T
    PEARTON, SJ
    JORDAN, AS
    ELECTRONICS LETTERS, 1989, 25 (22) : 1496 - 1498
  • [49] EPITAXIAL GROWTH OF CuGaS2 BY METALORGANIC CHEMICAL VAPOR DEPOSITION.
    Hara, Kazuhiko
    Kojima, Tohru
    Kukimoto, Hiroshi
    Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (07):
  • [50] COLUMN III AND V ORDERING IN INGAASP AND GAASP GROWN ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    PLANO, WE
    NAM, DW
    MAJOR, JS
    HSIEH, KC
    HOLONYAK, N
    APPLIED PHYSICS LETTERS, 1988, 53 (25) : 2537 - 2539
12345