PULSED OPERATION OF InGaAsP/InGaP DOUBLE HETEROSTRUCTURE VISIBLE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.

被引：0

作者：

Iwamoto, Takashi ^{[1
]}

Mori, Kazuo ^{[1
]}

Mizuta, Masashi ^{[1
]}

Kukimoto, Hiroshi ^{[1
]}

机构：

[1] Tokyo Inst of Technology, Imaging, Science & Engineering Lab,, Yokohama, Jpn, Tokyo Inst of Technology, Imaging Science & Engineering Lab, Yokohama, Jpn

来源：

| 1985年 / 24期

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[21] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468
[22] Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition
Bohrer, J
Krost, A
Heitz, R
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[23] CW OPERATION OF AN ALGALNP DOUBLE HETEROSTRUCTURE LASER DIODE AT 77-K GROWN BY ATMOSPHERIC METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
MORI, Y
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[24] PHOTOLUMINESCENCE CHARACTERIZATION OF INGAP/GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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[25] Delta-doped InGaP grown by low pressure metalorganic chemical vapor deposition
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[26] ALGAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR VISIBLE LASER
MORI, Y
WATANABE, N
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2792 - 2798
[27] Delta-doped InGaP grown by low pressure metalorganic chemical vapor deposition
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APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1731 - 1733
[28] METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN ALGAAS LASERS WITH GROWN OPTICAL FACETS
MARUTANI, Y
NARUI, H
NEMOTO, K
HIGUCHI, Y
KOBAYASHI, T
MATSUDA, O
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 832 - 837
[29] HIGH-POWER (710 MW CW) SINGLE-LOBE OPERATION OF BROAD AREA ALGAAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[30] GaInAsP/InP 1.35 μm double heterostructure laser grown on silicon substrate by metalorganic chemical vapor deposition
1600, (74):

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