QUANTUM SIZE EFFECTS IN THE REFLECTION OF SLOW ELECTRONS FROM THIN FILMS.

被引：0

作者：

Park, Robert L. ^{[1
]}

Jonker, B.T. ^{[1
]}

Iwasaki, H. ^{[1
]}

Zhu, Q.G. ^{[1
]}

机构：

[1] Univ of Maryland, College Park, MD,, USA, Univ of Maryland, College Park, MD, USA

来源：

Applications of surface science | 1984年 / 22-23卷

关键词：

FILMS - Physical Properties;

D O I：

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学科分类号：

摘要：

The transmission coefficient of very low energy electrons ( less than equivalent to 10 ev) incident on epitaxial films on single crystal substrates is modulated by interference between reflection at the vacuum/film and film/substrate interfaces. We have observed these quantum size effect (QSE) oscillations for various systems: Cu and Ag/W(110), Cu/Ni(001), Ag/Cu(111) and Ag and Cu/Si(111)-7 multiplied by 7 for thicknesses from a few monolayers to approx. 100 A. The sensitivity of the quantum size oscillations to the abruptness of the interfaces is illustrated by a reduction in their amplitude with increasing disorder on an atomic scale at either the vacuum/film or the film/substrate interface. Using the W(110) LEED (00) beam width as an index of substrate surface roughness produced by mild ion bombardment prior to film deposition, we find that the QSE amplitude decreases linearly by 70% for an increase in monoatomic step densities from 1 to only 3% at the Cu/W interface.

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