Self-aligned AlGaAs/GaAs double heterostructure lasers grown by organometallic vapor phase epitaxy (OMVPE)

被引：0

作者：

Lee, B.J. ^{[1
]}

Chen, C.Y. ^{[1
]}

Hsu, C.C. ^{[1
]}

Chang, C.M. ^{[1
]}

机构：

[1] Industrial Technology Research Inst, Taiwan

来源：

MRL bulletin of research and development | 1988年 / 2卷 / 02期

关键词：

Crystals--Epitaxial Growth - Organometallics--Vapor Deposition - Semiconducting Aluminum Compounds--Growth - Semiconducting Gallium Arsenide--Growth - Semiconductor Diodes--Efficiency;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Self-aligned AlGaAs/GaAs double heterostructures were grown by a two-step OMVPE process. The unique feature of this process is that with only a single photolithographic processing step both mode control and current confinement can be obtained simultaneously. The laser diodes operate in the stable fundamental transverse mode with threshold currents of 74mA and differential quantum efficiency of 0.6 W/A. Output power per facet as high as 45 mw was obtained in a pulse operation.

引用

页码：5 / 8

共 50 条

[1] SELF-ALIGNED BURIED-HETEROSTRUCTURE LASERS GROWN ENTIRELY BY METALORGANIC VAPOR-PHASE EPITAXY
KONDO, Y
SATO, K
YAMAMOTO, M
APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1188 - 1190
[2] LOW-THRESHOLD GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
CHOI, HK
LEE, JW
SALERNO, JP
CONNORS, MK
TSAUR, BY
FAN, JCC
APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1114 - 1115
[3] SELF-ALIGNED ALGAAS/GAAS HBT WITH SELECTIVELY REGROWN OMVPE EMITTER
ENQUIST, PM
SLATER, DB
HUTCHBY, JA
MORRIS, AS
TREW, RJ
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (06) : 295 - 297
[4] ALGAAS/GAAS HBTS GROWN ON INP BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
HOBSON, WS
REN, F
PEARTON, SJ
FULLOWAN, TR
LASKOWSKI, EJ
CHEN, YK
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (04) : 595 - 597
[5] Organometallic vapor phase epitaxy (OMVPE)
Breiland, WG
Coltrin, ME
Creighton, JR
Hou, HQ
Moffat, HK
Tsao, JY
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1999, 24 (06): : 241 - 274
[6] GALVANOMAGNETIC EFFECT IN ALGAAS/GAAS HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
AINA, L
MATTINGLY, M
PANDE, K
APPLIED PHYSICS LETTERS, 1986, 49 (14) : 865 - 867
[7] N-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapor phase epitaxy
Wang, CA
Jensen, KF
Jones, AC
Choi, HK
APPLIED PHYSICS LETTERS, 1996, 68 (03) : 400 - 402
[8] n-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapor phase epitaxy
Massachusetts Inst of Technology, Lexington, United States
Appl Phys Lett, 3 (400-402):
[9] ROOM-TEMPERATURE CONTINUOUS OPERATION OF GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
CHOI, HK
WANG, CA
FAN, JCC
JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) : 1916 - 1918
[10] GAAS/ALGAAS QUANTUM-WELLS AND DOUBLE-HETEROSTRUCTURE LASERS GROWN BY CHEMICAL BEAM EPITAXY
TSANG, WT
MILLER, RC
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 55 - 65

← 1 2 3 4 5 →