Method for determining the composition and orientation of III-V {001} semiconductor surfaces

被引：0

作者：

Sung, M.M. ^{[1
]}

Kim, C. ^{[1
]}

Rabalais, J.W. ^{[1
]}

机构：

[1] Univ of Houston, Houston, United States

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1996年 / 118卷 / 1-4期

关键词：

This materiali s basedo n work supportedb y the National ScienceF oundationu nderG rant No. CHE-9321899 and the R.A. Welch Foundationu nder Grant No. E656. We expresso ur appreciationt o A. Bensaoulaa nd A. Delaney of the Space Vacuum Epitaxy Center at the Universityo f Houstonf or growtho f theG aAs samplea nd I.S.T; Inc. for use of the MBE facilities;

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引用

页码：522 / 529