THERMAL NOISE IN INSULATOR DIODE WITH TRAPS LYING BELOW THE FERMI LEVEL UNDER CDDM REGIME

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作者
Raghav, V.S. [1 ]
Sharma, Y.K. [1 ]
Agarwal, C.S. [1 ]
机构
[1] Department of Physics, R.B S. College, Agra,282 003, India
来源
| 1600年 / Indian Academy of Sciences卷 / 52期
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Fermi level - Semiconductor diodes;
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摘要
The effects of space charge and traps on the thermal noise in one carrier insulator diode with traps lying below the Fermi level have been studied using the regional approximation method. The mobility of the current carriers is proportional to the carrier density. It is shown that the noise is highly suppressed by the space charge present in the device. © (1983), (Indian Academy of Sciences). All Rights Reserved.
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