High-voltage lateral RESURF MOSFETs on 4H-SiC

被引：0
|
作者：
Chatty, K. [1 ]
Banerjee, S. [1 ]
Chow, T.P. [1 ]
Gutmann, R.J. [1 ]
Hoshi, M. [1 ]
机构：
[1] Rensselaer Polytechnic Inst, Troy, United States
来源：
Annual Device Research Conference Digest | 1999年
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页码：44 / 45
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