Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation

被引:0
|
作者
机构
来源
J Appl Phys | / 3卷 / 1316期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Effect of Ge Concentration on the Microstructure of Germanium Nanocrystals Produced by Ion Implantation in SiO2
    Ge, L. H.
    Wang, C.
    Cai, R. S.
    Liang, W. S.
    Wang, Y. Q.
    Ross, G. G.
    Barba, D.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (03) : 2196 - 2200
  • [32] Stability of Ag nanocrystals synthesized by ultra-low energy ion implantation in SiO2 matrices
    Benzo, Patrizio
    Cattaneo, Laura
    Farcau, Cosmin
    Andreozzi, Andrea
    Perego, Michele
    Benassayag, Gerard
    Pecassou, Beatrice
    Carles, Robert
    Bonafos, Caroline
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (10)
  • [33] Luminescence properties of ZnS:Mn nanocrystals embedded in SiO2 by ion implantation
    Chemam, R.
    Grob, J. J.
    Bouabellou, A.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 150 (01): : 26 - 31
  • [34] Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation
    Ergashov Y.S.
    Tashmukhamedova D.A.
    Rabbimov E.
    Journal of Surface Investigation, 2015, 9 (02): : 350 - 354
  • [35] GISAXS studies of morphology and size distribution of CdS nanocrystals formed in SiO2 by ion implantation
    Desnica, UV
    Dubcek, P
    Desnica-Frankovic, ID
    Buljan, M
    Salamon, K
    Milat, O
    Bernstorff, S
    White, CW
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 200 : 191 - 195
  • [36] Spectroscopic and electrical properties of ultrathin SiO2 layers formed with nitric acid
    Asuha
    Kobayashi, T
    Takahashi, M
    Iwasa, H
    Kobayashi, H
    SURFACE SCIENCE, 2003, 547 (03) : 275 - 283
  • [37] Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films
    Seol, KS
    Karasawa, T
    Ohki, Y
    Nishikawa, H
    Takiyama, M
    MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 193 - 195
  • [38] ZnO nanocluster formation in SiO2 by low energy ion implantation
    Muntele, I.
    Muntele, C.
    Thevenard, P.
    Ila, D.
    SURFACE & COATINGS TECHNOLOGY, 2007, 201 (19-20): : 8557 - 8559
  • [39] Mechanism of Si island retention in buried SiO2 layers formed by oxygen ion implantation
    Afanas'ev, VV
    Stesmans, A
    Revesz, AG
    Hughes, HL
    APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2106 - 2108
  • [40] Mechanism for Si island retention in buried SiO2 layers formed by oxygen ion implantation
    Afanas'ev, V.V.
    Stesmans, A.
    Revesz, A.G.
    Hughes, H.L.
    Applied Physics Letters, 1997, 71 (15):