Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 3卷 / 1316期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation
    Nakajima, A
    Futatsugi, T
    Nakao, H
    Usuki, T
    Horiguchi, N
    Yokoyama, N
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) : 1316 - 1320
  • [2] Microstructure and electrical properties of Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation
    Nakajima, A
    Nakao, H
    Ueno, H
    Futatsugi, T
    Yokoyama, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04): : 1317 - 1322
  • [3] Coulomb blockade in Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation
    Nakajima, A
    Nakao, H
    Ueno, H
    Futatsugi, T
    Yokoyama, N
    APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1071 - 1073
  • [4] Single electron charging of Sn nanocrystals in thin SiO2 film formed by low energy ion implantation
    Nakajima, A
    Futatsugi, T
    Horiguchi, N
    Nakao, H
    Yokoyama, N
    INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 159 - 162
  • [5] Formation of Sn nanocrystals in thin SiO2 film using low-energy ion implantation
    Nakajima, A
    Futatsugi, T
    Horiguchi, N
    Yokoyama, N
    APPLIED PHYSICS LETTERS, 1997, 71 (25) : 3652 - 3654
  • [6] Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers
    Coffin, H
    Bonafos, C
    Schamm, S
    Cherkashin, N
    Respaud, M
    Ben Assayag, G
    Dimitrakis, P
    Normand, P
    Tencé, M
    Colliex, C
    Claverie, A
    Materials and Processes for Nonvolatile Memories, 2005, 830 : 281 - 286
  • [7] Sn quantum dots embedded in SiO2 formed by low energy ion implantation
    Zhao, J. P.
    Meng, Y.
    Huang, D. X.
    Chu, W. K.
    Rabalais, J. W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (03): : 796 - 800
  • [8] Optical properties of Si nanocrystals formed in SiO2 by ion implantation
    White, CW
    Withrow, SP
    Meldrum, A
    Budai, JD
    Hembree, DM
    Zhu, JG
    Henderson, DO
    Prawer, S
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 249 - 254
  • [9] Synthesis and properties of GaAs nanocrystals in SiO2 formed by ion implantation
    Zhu, JG
    White, CW
    Wallis, DJ
    Budai, JD
    Withrow, SP
    Henderson, DO
    ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING, 1996, 396 : 447 - 452
  • [10] Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2
    Kluth, P
    Johannessen, B
    Glover, CJ
    Foran, GJ
    Ridgway, MC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 238 (1-4): : 285 - 289
12345