RESONANT DRIVE CIRCUIT FOR POWER FIELD-EFFECT TRANSISTORS.

被引:0
|
作者
Driscoll, C.D.
Waechter, M.
机构
来源
IBM technical disclosure bulletin | 1983年 / 26卷 / 3 B期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1637 / 1638
相关论文
共 50 条
  • [22] Ion-selective field-effect transistors. Threshold voltage calculation
    Prishchepa, M. M.
    Lozovyi, S. V.
    VISNYK NTUU KPI SERIIA-RADIOTEKHNIKA RADIOAPARATOBUDUVANNIA, 2012, (50): : 105 - 113
  • [23] Pyroelectric Field Effect Transistors.
    Schalkhausser, F.
    Bundesministerium fuer Forschung und Technologie, Forschungsbericht, Technologische Forschung und Entwicklung, 1975, (75-20):
  • [24] NONPLANAR POWER FIELD-EFFECT TRANSISTORS
    SALAMA, CAT
    OAKES, JG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1222 - 1228
  • [25] TRANSISTORS WITH A POWER IN IMPULSE FIELD-EFFECT
    SANDO, S
    ONDE ELECTRIQUE, 1982, 62 (02): : 33 - 33
  • [26] FOCUS ON FIELD EFFECT TRANSISTORS.
    Elphick, Michael
    Electronic Design, 1975, 23 (21) : 58 - 66
  • [27] Current-voltage characteristics in organic field-effect transistors. Effect of interface dipoles
    Sworakowski, Juliusz
    CHEMICAL PHYSICS, 2015, 456 : 106 - 110
  • [28] APPLICATIONS OF RESONANT-TUNNELING FIELD-EFFECT TRANSISTORS
    WOODWARD, TK
    MCGILL, TC
    CHUNG, HF
    BURNHAM, RD
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) : 122 - 124
  • [29] GATE-VOLTAGE-DEPENDENT TRANSPORT MEASUREMENTS ON HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS.
    Prost, Werner
    Brockerhoff, W.
    Heime, Klaus
    Ploog, Klaus
    Schlapp, Winfried
    Weimann, G.
    Morkoc, Hadis
    IEEE Transactions on Electron Devices, 1986, ED-33 (05) : 646 - 650
  • [30] Fast and Precise Determination of the 'Small Signal' Equivalent Circuit of Field Effect Transistors. .
    Dambrine, Gilles
    Cappy, Alain
    Annales des Telecommunications/Annals of Telecommunications, 1988, 43 (5-6): : 274 - 281