Nonconservative liquid-phase epitaxy of semiconductors

被引：0

作者：

Popov, V.P. ^{[1
]}

机构：

[1] S. Ordzhonikidze Novocherkass, Polytechnical Inst, Russia

来源：

Soviet physics journal | 1988年 / 31卷 / 01期

关键词：

Crystallization - Thermodynamics - Crystals - Epitaxial Growth - Diffusion - Liquids - Phase Equilibria - Solid Solutions - Thermodynamics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The kinetics of nonconservative liquid-phase epitaxy of semiconductors with replenishment of the solution in a melt under the action of different applied fields and owing to the internal energy of the system itself are analyzed. The physical-chemical laws governing these processes, which are useful for growing high-quality semiconductor epitaxial layers with given electrophysical and geometric properties, are determined.

引用

页码：45 / 50