Critical layer thickness on n-In0.52Al0.48As/In0.8Ga0.2As/In0.52Al0.48As pseudomorphic heterostructures studied by photoluminescence

被引：0

作者：

Ueno, Yoshiki ^{[1
]}

Taguchi, Takashi ^{[1
]}

Matsugatani, Kazuoki ^{[1
]}

Takeuchi, Yukihiro ^{[1
]}

Sugiyama, Yoshinobu ^{[1
]}

Tacano, Munecazu ^{[1
]}

Hattori, Tadashi ^{[1
]}

机构：

[1] Research Lab Nippondenso Co, Ltd, Aichi, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1994年 / 33卷 / 2 A期

关键词：

Crystal lattices - Mathematical models - Molecular beam epitaxy - Photoluminescence - Relaxation processes - Semiconductor device structures - Semiconductor growth - Thickness measurement;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Photoluminescence (PL) analysis on n-In0.52Al 0.48As/In0.8Ga0.2As/In0.52Al0.48As/InP pseudomorphic heterostructures grown by molecular beam epitaxy has been carried out to investigate the critical layer thickness. Crystal quality degradation is followed by the relaxation of the lattice-mismatched layer. The critical layer thickness for this material system that is measured by PL is found to agree with the value from the energy balance model.

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