Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

被引:0
|
作者
机构
[1] [1,Voogt, F.C.
[2] Ishihara, R.
[3] Tichelaar, F.D.
来源
Voogt, F.C. (frans.voogt@philips.com) | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing
    Voogt, FC
    Ishihara, R
    Tichelaar, FD
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (05) : 2873 - 2879
  • [2] USE OF TETRAETHYLGERMANE IN ARF EXCIMER-LASER CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS SILICON-GERMANIUM FILMS
    ISHIHARA, F
    UJI, H
    KAMIMURA, T
    MATSUMOTO, S
    HIGUCHI, H
    CHICHIBU, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (5A): : 2229 - 2234
  • [3] CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS DURING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    KINSBRON, E
    STERNHEIM, M
    KNOELL, R
    APPLIED PHYSICS LETTERS, 1983, 42 (09) : 835 - 837
  • [4] REVERSE ANNEALING OF ARSENIC-IMPLANTED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION (LPCVD) AMORPHOUS-SILICON FILMS
    TSAI, MJ
    WANG, FS
    CHENG, HC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (9A): : L1254 - L1256
  • [5] Crystallization of amorphous Si films by excimer laser annealing
    Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei
    230031, China
    Hongwai yu Jiguang Gongcheng Infrared Laser Eng., 3 (959-963):
  • [6] CHEMICAL-VAPOR-DEPOSITION OF ANTIREFLECTIVE LAYER FILM FOR EXCIMER-LASER LITHOGRAPHY
    GOCHO, T
    OGAWA, T
    MUROYAMA, M
    SATO, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 486 - 490
  • [7] MICROSTRUCTURE OF SIC THIN-FILMS PRODUCED ON GRAPHITE BY EXCIMER-LASER CHEMICAL-VAPOR-DEPOSITION
    SUZUKI, H
    ARAKI, H
    NODA, T
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1994, 13 (01) : 49 - 52
  • [8] GROWTH OF ZNO FILMS BY LOW-PRESSURE ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
    KOBAYASHI, K
    MATSUBARA, T
    MATSUSHIMA, S
    OKADA, G
    THIN SOLID FILMS, 1993, 235 (1-2) : 20 - 21
  • [9] PREPARATION OF ZNO FILMS BY LOW-PRESSURE ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
    KOBAYASHI, K
    MATSUBARA, T
    MATSUSHIMA, S
    OKADA, G
    CHEMISTRY LETTERS, 1993, (12) : 2133 - 2136
  • [10] MICROSTRUCTURE AND GROWTH OF SIC FILM BY EXCIMER-LASER CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES
    NODA, T
    SUZUKI, H
    ARAKI, H
    ABE, F
    OKADA, M
    JOURNAL OF MATERIALS SCIENCE, 1993, 28 (10) : 2763 - 2768