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- [1] SUB-MICRON CHANNEL MOSFET USING FOCUSED BORON ION-BEAM IMPLANTATION INTO SILICON JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L543 - L545
- [2] FOCUSED BORON ION-BEAM IMPLANTATION INTO SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 858 - 863
- [5] HIGH-DOSE RATE EFFECT OF FOCUSED-ION-BEAM BORON IMPLANTATION INTO SILICON JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L417 - L420
- [6] FOCUSED PHOSPHORUS ION-BEAM IMPLANTATION INTO SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 511 - 514
- [7] FOCUSED ION-BEAM GALLIUM IMPLANTATION INTO SILICON APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (03): : 183 - 190
- [9] Broad beam ion implantation of boron in silicon with a compact broad beam ion implanter SURFACE & COATINGS TECHNOLOGY, 1999, 114 (01): : 81 - 84
- [10] Broad beam ion implantation of boron in silicon with a compact broad beam ion implanter Surf Coat Technol, 1 (81-84):