Numerical analysis on channel potential distribution of TF-SOI-MOSFET

被引:0
|
作者
Tang, Ting'ao [1 ]
Zheng, Dawei [1 ]
Huang, Yiping [1 ]
机构
[1] Fudan Univ, Shanghai, China
来源
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1992年 / 13卷 / 12期
关键词
13;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:736 / 741
相关论文
共 50 条
  • [11] NUMERICAL-ANALYSIS OF SMALL-SIGNAL CHARACTERISTICS OF A FULLY DEPLETED SOI MOSFET - COMMENT
    FLANDRE, D
    SOLID-STATE ELECTRONICS, 1994, 37 (07) : 1447 - 1448
  • [12] Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces
    Hamaide, G.
    Allibert, F.
    Andrieu, F.
    Romanjek, K.
    Cristoloveanu, S.
    SOLID-STATE ELECTRONICS, 2011, 57 (01) : 83 - 86
  • [13] Comparisons and extension of recent surface potential models for fully depleted short-channel SOI MOSFET's
    Niu, GF
    Chen, RMM
    Ruan, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (11) : 2034 - 2037
  • [14] Breakdown voltage in uniaxially strained n-channel SOI MOSFET
    Watanabe, N
    Kojima, T
    Maeda, Y
    Nishisaka, M
    Asano, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 2134 - 2139
  • [15] MEASUREMENT OF MOSFET CHANNEL POTENTIAL PROFILE
    YEOW, YT
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2368 - 2372
  • [16] Bipolar mechanisms present in short channel SOI-MOSFET transistors
    Janczyk, G
    MICROELECTRONICS RELIABILITY, 2005, 45 (7-8) : 1257 - 1263
  • [17] Evaluation of graded-channel SOI MOSFET operation at high temperatures
    Galeti, Milene
    Antonio Pavanello, Marcelo
    Antonio Martino, Joao
    MICROELECTRONICS JOURNAL, 2006, 37 (07) : 601 - 607
  • [18] Reduction of the reverse short channel effect in thick SOI MOSFET's
    Tsoukalas, D
    Tsamis, C
    Kouvatsos, DN
    Revva, P
    Tsoi, E
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (03) : 90 - 92
  • [19] Study on LOCOS isolation for short-channel SOI MOSFET's
    Iwamatsu, T
    Miyamoto, S
    Yamaguchi, Y
    Ipposhi, T
    Inoue, Y
    Miyoshi, H
    PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1996, 96 (03): : 318 - 323
  • [20] SOI-MOSFET's body potential: floating or fixed?
    Janczyk, G
    EXPERIENCE OF DESIGNING AND APPLICATION OF CAD SYSTEMS IN MICROELECTRONICS, 2003, : 63 - 65