PERPENDICULAR TRANSPORT MEASUREMENTS IN GaAs/(Al,Ga)As/GaAs HETEROSTRUCTURES.

被引：0
|
作者：
Solomon, P.M. [1 ]
Wright, S.L. [1 ]
机构：
[1] IBM, T. J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, T. J. Watson Research Cent, Yorktown Heights, NY, USA
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 11期
关键词：
GALLIUM MATERIALS/DEVICES - SUMMARY FORM ONLY - TUNNEL DEVICES;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] ELECTRICAL PROPERTIES OF INTERFACE-TRAPS IN SELECTIVELY DOPED AlGaAs/GaAs HETEROSTRUCTURES.
    Takikawa, Masahiko
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (12): : 2026 - 2032
  • [42] 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.
    Ustinov, VM
    Zhukov, AE
    Kovsh, AR
    Maleev, NA
    Mikhrin, SS
    Vasil'ev, AP
    Nikitina, EV
    Semenova, ES
    Kryzhanovskaya, NV
    Musikhin, YG
    Shernyakov, YM
    Maximov, MV
    Ledentsov, NN
    Bimberg, D
    Alferov, ZI
    SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR HETEROEPITAXY, 2004, 794 : 189 - 194
  • [43] Strain, doping, and disorder effects in GaAs/Ge/Si heterostructures. A Raman spectroscopy investigation
    1600, (71):
  • [44] High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates
    Chin, A
    Lee, K
    APPLIED PHYSICS LETTERS, 1996, 68 (24) : 3437 - 3439
  • [45] Contribution of inelastically scattered electrons to high resolution images of (Al, Ga) As/GaAs heterostructures
    Boothroyd, C.B.
    Stobbs, W.M.
    Ultramicroscopy, 1988, 26 (04): : 361 - 376
  • [46] SPIN SPLITTING OF CONDUCTION SUBBANDS IN GAAS-GA0.7AL0.3AS HETEROSTRUCTURES
    PFEFFER, P
    ZAWADZKI, W
    PHYSICAL REVIEW B, 1995, 52 (20) : 14332 - 14335
  • [47] MAGNETORESISTANCE OF NARROW GAAS-(AL,GA)AS HETEROSTRUCTURES IN THE QUASI-BALLISTIC REGIME
    VANHOUTEN, H
    BEENAKKER, CWJ
    BROEKAART, MEI
    HEIJMAN, MGHJ
    VANWEES, BJ
    MOOIJ, HE
    ANDRE, JP
    ACTA ELECTRONICA, 1988, 28 : 27 - 38
  • [48] EFFECT OF BACKGROUND DOPING ON THE ELECTRON-MOBILITY OF (AL,GA)AS-GAAS HETEROSTRUCTURES
    DRUMMOND, TJ
    KOPP, W
    MORKOC, H
    HESS, K
    CHO, AY
    STREETMAN, BG
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5689 - 5690
  • [49] MECHANISMS OF A PERSISTENT PHOTOCONDUCTIVITY IN SELECTIVELY DOPED GAAS/N-(AL, GA)AS HETEROSTRUCTURES
    KOPEV, PS
    NADTOCHII, MY
    USTINOV, VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (08): : 859 - 861
  • [50] ION-IMPLANTATION DAMAGE IN AL0.6GA0.4AS/GAAS HETEROSTRUCTURES
    TURKOT, BA
    FORBES, DV
    ROBERTSON, IM
    COLEMAN, JJ
    REHN, LE
    KIRK, MA
    BALDO, PM
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (01) : 97 - 103
12345