PERPENDICULAR TRANSPORT MEASUREMENTS IN GaAs/(Al,Ga)As/GaAs HETEROSTRUCTURES.

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作者：
Solomon, P.M. [1 ]
Wright, S.L. [1 ]
机构：
[1] IBM, T. J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, T. J. Watson Research Cent, Yorktown Heights, NY, USA
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 11期
关键词：
GALLIUM MATERIALS/DEVICES - SUMMARY FORM ONLY - TUNNEL DEVICES;
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