Annealing ultra thin Ta2O5 films deposited on bare and nitrogen passivated Si(100)

被引：0
|
作者：
Mao, A.Y. [1 ]
Son, K.-A. [1 ]
Hess, D.A. [1 ]
Brown, L.A. [1 ]
White, J.M. [1 ]
Kwong, D.L. [1 ]
Roberts, D.A. [2 ]
Vrtis, R.N. [2 ]
机构：
[1] Science and Technology Center for Synthesis, Growth, and Analysis of Electronic Materials, University of Texas at Austin, Austin, TX 78712, United States
[2] Schumacher, Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, CA 92009, United States
来源：
Thin Solid Films | 1999年 / 349卷 / 01期
关键词：
This work was supported by the Science and Technology Centers program of the National Science Foundation (grant CHE-8920120). We thank Scott Semiconductor Gas for providing gases used in this work;
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摘要：
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页码：230 / 237
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