Annealing ultra thin Ta2O5 films deposited on bare and nitrogen passivated Si(100)

被引：0
|
作者：
Mao, A.Y. [1 ]
Son, K.-A. [1 ]
Hess, D.A. [1 ]
Brown, L.A. [1 ]
White, J.M. [1 ]
Kwong, D.L. [1 ]
Roberts, D.A. [2 ]
Vrtis, R.N. [2 ]
机构：
[1] Science and Technology Center for Synthesis, Growth, and Analysis of Electronic Materials, University of Texas at Austin, Austin, TX 78712, United States
[2] Schumacher, Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, CA 92009, United States
来源：
Thin Solid Films | 1999年 / 349卷 / 01期
关键词：
This work was supported by the Science and Technology Centers program of the National Science Foundation (grant CHE-8920120). We thank Scott Semiconductor Gas for providing gases used in this work;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
40
引用
收藏
页码：230 / 237
相关论文
共 50 条
  • [1] Annealing ultra thin Ta2O5 films deposited on bare and nitrogen passivated Si(100)
    Mao, AY
    Son, KA
    Hess, DA
    Brown, LA
    White, JM
    Kwong, DL
    Roberts, DA
    Vrtis, RN
    THIN SOLID FILMS, 1999, 349 (1-2) : 230 - 237
  • [2] Deposition and annealing of ultrathin Ta2O5 films on nitrogen passivated Si(100)
    Univ of Texas at Austin, Austin, United States
    Electrochem Solid State Letters, 4 (178-180):
  • [3] Deposition and annealing of ultrathin Ta2O5 films on nitrogen passivated Si(100)
    Son, KA
    Mao, AY
    Hess, DA
    Brown, LA
    White, JM
    Kwong, DL
    Roberts, DA
    Vrtis, RN
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 1998, 1 (04) : 178 - 180
  • [4] Properties and reliability of Ta2O5 thin films deposited on Ta
    Ezhilvalavan, S
    Tseng, TY
    49TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 1999 PROCEEDINGS, 1999, : 1042 - 1046
  • [5] Properties and reliability of Ta2O5 thin films deposited on Ta
    Ezhilvalavan, S.
    Tseng, Tseung-Yuen
    Proceedings - Electronic Components and Technology Conference, 1999, : 1042 - 1046
  • [6] Electrical properties of Ta2O5 thin films deposited on Ta
    Ezhilvalavan, S
    Tseng, TY
    APPLIED PHYSICS LETTERS, 1999, 74 (17) : 2477 - 2479
  • [7] Effects of annealing on properties of Ta2O5 thin films deposited by ion beam sputtering
    Ji, Yi-Qin, 1600, Chinese Academy of Sciences (22):
  • [8] Structural and electrical properties of Ta2O5 thin films deposited on Si(100) from Ta(OC2H5)5 precursor
    Jolly, F
    Passacantando, M
    Salerni, V
    Lozzi, L
    Picozzi, P
    Santucci, S
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2003, 322 (1-3) : 233 - 239
  • [9] Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si
    Chaneliere, C
    Four, S
    Autran, JL
    Devine, RAB
    MICROELECTRONICS RELIABILITY, 1999, 39 (02) : 261 - 268
  • [10] Nitrogen plasma annealing for low temperature Ta2O5 films
    Alers, GB
    Fleming, RM
    Wong, YH
    Dennis, B
    Pinczuk, A
    Redinbo, G
    Urdahl, R
    Ong, E
    Hasan, Z
    APPLIED PHYSICS LETTERS, 1998, 72 (11) : 1308 - 1310
12345