Characterization of low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors by low-frequency noise measurements

被引：0
|
作者：
Dimitriadis, Charalabos A. [1 ]
Brini, Jean [1 ]
Kamarinos, Georges [1 ]
Ghibaudo, Gerard [1 ]
机构：
[1] ENSERG, Grenoble, France
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：72 / 77
相关论文
共 50 条
  • [21] Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors
    Angelis, CT
    Dimitriadis, CA
    Farmakis, FV
    Brini, J
    Kamarinos, G
    Miyasaka, M
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) : 7083 - 7086
  • [22] High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon
    Rogel, R
    Sarret, M
    Mohammed-Brahim, T
    Bonnaud, O
    Kleider, JP
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 141 - 145
  • [23] Fracture toughness of low-pressure chemical-vapor-deposited polycrystalline silicon carbide thin films
    Hatty, V.
    Kahn, H.
    Trevino, J.
    Zorman, C.A.
    Mehregany, M.
    Ballarini, R.
    Heuer, A.H.
    Journal of Applied Physics, 2006, 99 (01): : 1 - 5
  • [24] Fracture toughness of low-pressure chemical-vapor-deposited polycrystalline silicon carbide thin films
    Hatty, V
    Kahn, H
    Trevino, J
    Zorman, CA
    Mehregany, M
    Ballarini, R
    Heuer, AH
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)
  • [25] Low-frequency noise in carbon nanotube network thin-film transistors
    Tanaka, Tomo
    Sano, Eiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (09)
  • [26] Numerical simulation of low-frequency noise in polysilicon thin-film transistors
    Pichon, L.
    Boukhenoufa, A.
    Cordier, C.
    Cretu, B.
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) : 716 - 718
  • [27] Low-frequency noise in cadmium-selenide thin-film transistors
    Deen, MJ
    Rumyantsev, SL
    Landheer, D
    Xu, DX
    APPLIED PHYSICS LETTERS, 2000, 77 (14) : 2234 - 2236
  • [28] EFFECT OF PRESSURE ON THE GROWTH OF CRYSTALLITES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS AND THE EFFECTIVE ELECTRON-MOBILITY UNDER HIGH NORMAL FIELD IN THIN-FILM TRANSISTORS
    DIMITRIADIS, CA
    STOEMENOS, J
    COXON, PA
    FRILIGKOS, S
    ANTONOPOULOS, J
    ECONOMOU, NA
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8402 - 8411
  • [29] LATERAL DIFFUSION OF ARSENIC IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON
    LEWIS, N
    GILDENBLAT, G
    GHEZZO, M
    KATZ, W
    SMITH, GA
    APPLIED PHYSICS LETTERS, 1983, 42 (02) : 171 - 172
  • [30] Low frequency noise in intrinsic low pressure chemical vapour deposited polycrystalline silicon resistors
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 434 - 437
12345