Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition

被引：0
|
作者：
Soga, T. [1 ]
Suzuki, T. [1 ]
Mori, M. [1 ]
Jiang, Z.K. [1 ]
Jimbo, T. [1 ]
Umeno, M. [1 ]
机构：
[1] Nagoya Inst of Technology, Nagoya, Japan
来源：
Journal of Crystal Growth | 1993年 / 132卷 / 3-4期
关键词：
Buffer layers - Gallium phosphide - Metalorganic chemical vapor deposition;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：414 / 418
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