共 50 条
- [34] SELECTIVE GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (6A): : L713 - L716
- [38] Surface flattening of GaN by selective area metallorganic vapor phase epitaxy Japanese Journal of Applied Physics, Part 2: Letters, 1998, 37 (07):