Low-temperature growth and measurement of oxygen in reactively sputtered AlN thin films

被引：0
|
作者：
Kumar, Sunil [1 ]
Tansley, T.L. [1 ]
机构：
[1] Macquarie Univ, Sydney
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 8 A期
关键词：
Aluminum compounds - Film growth - Low temperature operations - Microstructure - Nitrides - Oxygen - Rutherford backscattering spectroscopy - Scanning electron microscopy - Sputter deposition - Stoichiometry - Substrates - X ray photoelectron spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：4154 / 4158
相关论文
共 50 条
  • [1] LOW-TEMPERATURE GROWTH AND MEASUREMENT OF OXYGEN IN REACTIVELY SPUTTERED ALN THIN-FILMS
    KUMAR, S
    TANSLEY, TL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A): : 4154 - 4158
  • [2] LOW-TEMPERATURE GROWTH OF RF REACTIVELY PLANAR MAGNETRON-SPUTTERED ALN FILMS
    PENZA, M
    DERICCARDIS, MF
    MIRENGHI, L
    TAGLIENTE, MA
    VERONA, E
    THIN SOLID FILMS, 1995, 259 (02) : 154 - 162
  • [3] Low-temperature reactively sputtered iron oxide for thin film devices
    Miller, EL
    Paluselli, D
    Marsen, B
    Rocheleau, RE
    THIN SOLID FILMS, 2004, 466 (1-2) : 307 - 313
  • [4] Process monitoring and control of low temperature reactively sputtered AlN
    Kirkpatrick, SR
    Rohde, SL
    Mihut, DM
    Kurruppu, ML
    Swanson, JR
    Thomson, D
    Woollam, JA
    THIN SOLID FILMS, 1998, 332 (1-2) : 16 - 20
  • [5] Low-Temperature Deposition of Reactively Sputtered SiNx Films Applicable to TSV Process
    Sato, Masaru
    Takeyama, Mayumi B.
    Kobayashi, Yasushi
    Nakata, Yoshihiro
    Nakamura, Tomoji
    Noya, Atsushi
    ELECTRONICS AND COMMUNICATIONS IN JAPAN, 2016, 99 (09) : 101 - 107
  • [6] Effect of substrate composition on the piezoelectric response of reactively sputtered AlN thin films
    Ruffner, JA
    Clem, PG
    Tuttle, BA
    Dimos, D
    Gonzales, DM
    THIN SOLID FILMS, 1999, 354 (1-2) : 256 - 261
  • [7] Effect of substrate composition on the piezoelectric response of reactively sputtered AlN thin films
    Sandia National Laboratories MS 1349, P.O. Box 5800, Albuquerque, NM 87185-1349, United States
    Thin Solid Films, 1 (256-261):
  • [8] Growth and electrical properties of reactively sputtered WSx thin films
    Regula, M
    Ballif, C
    Levy, F
    POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY, 1996, 51-5 : 335 - 340
  • [9] Growth mechanism of reactively sputtered aluminum nitride thin films
    Hwang, BH
    Chen, CS
    Lu, HY
    Hsu, TC
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2002, 325 (1-2): : 380 - 388
  • [10] OXIDATION OF CRNX HARD COATINGS REACTIVELY SPUTTERED AT LOW-TEMPERATURE
    NAVINSEK, B
    PANJAN, P
    THIN SOLID FILMS, 1993, 223 (01) : 4 - 6
12345