ESTIMATION OF SATURATION POWER OF GUNN DIODE AMPLIFIER.

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作者
Aishima, Asuo
Uchiike, Heiju
Fukushima, Yoshifumi
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SEMICONDUCTOR DIODES; GUNN;
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Large-signal operation of a stable Gunn diode is analyzed on the basis of Poisson's equation, a current continuity equation, a conduction current equation, and an equation involving the electron velocity and the electric field. Dependences of the two-terminal admittance on the doping gradient and the ac voltage are found. Also shown are the relations between saturation power and donor concentration, dc voltage, doping gradient, signal frequency and operating temperature. From these results it is observed that as the ac voltage increases the frequency at which maximum conductance occurs decreases, while the output power is reduced in proportion to the doping gradient. The saturation power is strongly influenced by the working temperature. This paper refers only to the case where the nl product is less than 5 multiplied by 10**1**1/cm**2 (n is the electron concentration and l is the length of the active region).
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页码:93 / 99
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