Rapid thermal process-induced defects in silicon position detectors

被引：0

作者：

Alietti, M. ^{[1
]}

Nava, F. ^{[1
]}

Tonini, R. ^{[1
]}

cantoni, P. ^{[1
]}

Stagni, L. ^{[1
]}

Cavallini, A. ^{[1
]}

机构：

[1] INFN, Bologna, Italy

来源：

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 1994年 / A337卷 / 2-3期

关键词：

Rapid thermal processing;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have demonstrated that it is possible to obtain low levels of defects and contaminations in the bulk and at the Si/SiO2 interface with correlated good electrical parameters of the active area of the Si detector. we have combined various technological methods, such as very low-temperature (80 K) ion implantation, reasonably low-temperature (600°C) fast annealing (30s) after the ion implantation process, barrier layer (SiO2) during ion-implantation and fast annealing processes to prevent the penetration of impurities into the interface, and a final low temperature (400°C) heat treatment to reduce interface trap density generated by electron-beam metallization.

引用

页码：394 / 402

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