INFLUENCE OF UNIAXIAL DEFORMATION ON THE RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN SILICON IRRADIATED WITH gamma RAYS.

被引：0

作者：

Tarasik, M.I.

Tkachev, V.D.

Yanchenko, A.M.

机构：

来源：

Soviet physics. Semiconductors | 1981年 / 15卷 / 01期

关键词：

Compendex;

D O I：

暂无

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学科分类号：

摘要：

SEMICONDUCTING SILICON

引用

页码：58 / 60

共 4 条

[1] RECOMBINATION IN n-TYPE SILICON IRRADIATED WITH HIGH-ENERGY GAMMA RAYS.
Lugakov, P.F.
Tkachev, V.D.
Shusha, V.V.
1600, (11):
[2] INFLUENCE OF THE IMPURITY COMPOSITION ON THE FORMATION OF RECOMBINATION CENTERS DURING IRRADIATION OF n-TYPE SILICON WITH HIGH-ENERGY gamma RAYS.
Lugakov, P.F.
Tkachev, V.D.
Shusha, V.V.
Soviet physics. Semiconductors, 1979, 13 (05): : 514 - 517
[3] INFLUENCE OF UNIAXIAL COMPRESSION ON THE NONEQUILIBRIUM CARRIER LIFETIME IN SILICON.
Patrin, A.A.
Tarasik, M.I.
Tkachev, V.D.
Yanchenko, A.M.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (10): : 1326 - 1327
[4] RECOMBINATION OF NONEQUILIBRIUM CARRIERS AT HIGH RATES OF EXCITATION OF A METAL-DOPED SILICON SURFACE.
Zuev, V.A.
Litovchenko, V.G.
Milenin, V.V.
Popov, V.G.
Primachenko, V.E.
Snitko, O.V.
1600, (11):