Ferroelectric films and devices

被引：0
作者：
Kingon, Angus I.
Streiffer, Stephen K.
机构：
[1] Materials Research Center, North Carolina State University, Raleigh, NC 27695-7919, United States
[2] Materials Science Division, Argonne National Laboratory, Argonne, IL 60439-4838, United States
来源：
Current Opinion in Solid State and Materials Science | 1999年 / 4卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：39 / 44
相关论文
共 50 条
  • [31] Electrode structures for integration of ferroelectric or high dielectric constant films in semiconductor devices
    Grill, A
    FERROELECTRIC THIN FILMS VII, 1999, 541 : 89 - 99
  • [32] Pulsed laser deposition of ferroelectric thin films for active microwave electronic devices
    Horwitz, JS
    Chrisey, DB
    Carter, AC
    Chang, W
    Knauss, LA
    Pond, JM
    Kirchoefer, SW
    Korn, D
    Qadri, SB
    LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING II, 1997, 2991 : 238 - 246
  • [33] Effect of Mg doping on ferroelectric PST thin films for high tunable devices
    Li, X. T.
    Huo, W. L.
    Mak, C. L.
    Sui, S.
    Weng, W. J.
    Han, G. R.
    Shen, G.
    Du, P. Y.
    MATERIALS CHEMISTRY AND PHYSICS, 2008, 108 (2-3) : 417 - 420
  • [34] Sol-gel processed ferroelectric and multiferroic thin films for integrated devices
    Sharma, H. Basantakumar
    INTEGRATED FERROELECTRICS, 2018, 193 (01) : 14 - 23
  • [35] Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices
    Lee, Younghwan
    Jeong, Hyun Woo
    Kim, Se Hyun
    Yang, Kun
    Park, Min Hyuk
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 160
  • [36] KTN ferroelectric thin-films:: Application to the realization of tunable microwave devices
    Laur, Vincent
    Moussavou, Arnaud
    Rousseau, Anthony
    Tanné, Gerard
    Laurent, Paul
    Bouquet, Valerie
    Guilloux-Viry, Maryline
    Huret, Fabrice
    2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2006, : 1239 - +
  • [37] Electrode structures for integration of ferroelectric or high dielectric constant films in semiconductor devices
    Grill, Alfred
    Materials Research Society Symposium - Proceedings, 1999, 541 : 89 - 99
  • [38] Ferroelectric embedded devices
    Rohm Co, Ltd, Kyoto, Japan
    Integr Ferroelectr, 1 -4 pt 1 (41-51):
  • [39] RELAXOR FERROELECTRIC DEVICES
    Uchino, Kenji
    FERROELECTRICS, 1994, 151 (01) : 321 - 330
  • [40] Ferroelectric films
    Uhlmann, DR
    Dawley, JT
    Poisl, WH
    Zelinski, BJJ
    Teowee, G
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2000, 19 (1-3) : 53 - 64
12345