Assignment of deep levels causing yellow luminescence in GaN

被引：0
|
作者：
机构：
[1] Soh, C.B.
[2] 1,Chua, S.J.
[3] Lim, H.F.
[4] Chi, D.Z.
[5] Tripathy, S.
[6] Liu, W.
来源：
Soh, C.B. | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [31] Optoelectronic properties of GaN epilayers in the region of yellow luminescence
    Grazzi, C.
    Strunk, H. P.
    Castaldini, A.
    Cavallini, A.
    Schenk, H. P. D.
    Gibart, P.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (07)
  • [32] Properties of the yellow luminescence in undoped GaN epitaxial layers
    Hofmann, DM
    Kovalev, D
    Steude, G
    Meyer, BK
    Hoffmann, A
    Eckey, L
    Heitz, R
    Detchprom, T
    Amano, H
    Akasaki, I
    PHYSICAL REVIEW B, 1995, 52 (23): : 16702 - 16706
  • [33] Optoelectronic properties of GaN epilayers in the region of yellow luminescence
    Grazzi, C.
    Strunk, H.P.
    Castaldini, A.
    Cavallini, A.
    Schenk, H.P.D.
    Gibart, P.
    Journal of Applied Physics, 2006, 100 (07):
  • [34] Correlating yellow and blue luminescence with carbon doping in GaN
    Schmult, S.
    Schuermann, H.
    Schmidt, G.
    Veit, P.
    Bertram, F.
    Christen, J.
    Grosser, A.
    Mikolajick, T.
    JOURNAL OF CRYSTAL GROWTH, 2022, 586
  • [35] Yellow luminescence and Fermi level pinning in GaN layers
    Shalish, I
    Kronik, L
    Segal, G
    Shapira, Y
    Eizenberg, M
    Salzman, J
    APPLIED PHYSICS LETTERS, 2000, 77 (07) : 987 - 989
  • [36] Evidence of compensating centers as origin of yellow luminescence in GaN
    Schubert, EF
    Goepfert, ID
    Redwing, JM
    APPLIED PHYSICS LETTERS, 1997, 71 (22) : 3224 - 3226
  • [37] Selective excitation and thermal quenching of the yellow luminescence of GaN
    Colton, JS
    Yu, PY
    Teo, KL
    Weber, ER
    Perlin, P
    Grzegory, I
    Uchida, K
    APPLIED PHYSICS LETTERS, 1999, 75 (21) : 3273 - 3275
  • [38] Effect of reactive ion etching on the yellow luminescence of GaN
    Basak, D
    Lachab, M
    Nakanishi, T
    Sakai, S
    APPLIED PHYSICS LETTERS, 1999, 75 (23) : 3710 - 3712
  • [39] Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire
    Salviati, G
    Armani, N
    Zanotti-Fregonara, C
    Gombia, E
    Albrecht, MG
    Strunk, HP
    Mayer, M
    Kamp, M
    Gasparotto, A
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5 : art. no. - W11.50
  • [40] Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN
    Lee, In-Hwan (ihlee@jbnu.ac.kr), 1600, Elsevier Ltd (686):
12345