Assignment of deep levels causing yellow luminescence in GaN

被引：0
|
作者：
机构：
[1] Soh, C.B.
[2] 1,Chua, S.J.
[3] Lim, H.F.
[4] Chi, D.Z.
[5] Tripathy, S.
[6] Liu, W.
来源：
Soh, C.B. | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [21] Yellow and green luminescence in a freestanding GaN template
    Reshchikov, MA
    Morkoç, H
    Park, SS
    Lee, KY
    APPLIED PHYSICS LETTERS, 2001, 78 (20) : 3041 - 3043
  • [22] Two yellow luminescence bands in undoped GaN
    M. A. Reshchikov
    J. D. McNamara
    H. Helava
    A. Usikov
    Yu. Makarov
    Scientific Reports, 8
  • [23] Yellow luminescence in Mg-doped GaN
    Sanchez, FJ
    Calle, F
    Basak, D
    Tijero, JMG
    SanchezGarcia, MA
    Monroy, E
    Calleja, E
    Munoz, E
    Beaumont, B
    Gibart, P
    Serano, JJ
    Blanco, JM
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1997, 2 (27-31): : U10 - U16
  • [24] Two yellow luminescence bands in undoped GaN
    Reshchikov, M. A.
    McNamara, J. D.
    Helava, H.
    Usikov, A.
    Makarov, Yu.
    SCIENTIFIC REPORTS, 2018, 8
  • [25] Yellow luminescence from precipitates in GaN epilayers
    Kang, J
    Ogawa, T
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (06): : 631 - 635
  • [26] Yellow luminescence from precipitates in GaN epilayers
    J. Kang
    T. Ogawa
    Applied Physics A, 1999, 69 : 631 - 635
  • [27] Yellow luminescence from precipitates in GaN epilayers
    Kang, J.
    Ogawa, T.
    Applied Physics A: Materials Science and Processing, 1999, 69 (06): : 631 - 635
  • [28] Emission mechanism of the yellow luminescence in undoped GaN
    Chung, SJ
    Cha, OH
    Hong, CH
    Suh, EK
    Lee, HJ
    Kim, YS
    Kim, BH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (06) : 1003 - 1006
  • [29] Dynamical study of the yellow luminescence band in GaN
    Hoffmann, A
    Eckey, L
    Maxim, P
    Holst, JC
    Heitz, R
    Hofmann, DM
    Kovalev, D
    Stevde, G
    Volm, D
    Meyer, BK
    Detchprohm, T
    Hiramatsu, K
    Amano, H
    Akasaki, I
    SOLID-STATE ELECTRONICS, 1997, 41 (02) : 275 - 278
  • [30] Mechanism of yellow luminescence in GaN at room temperature
    Matys, M.
    Adamowicz, B.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (06)
12345