a-Si:H p-i-n junctions as ionizing particle detectors

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机构：
[1] Aglietti, U.
[2] Bacci, C.
[3] Evangelisti, F.
[4] Falconieri, M.
[5] Fiorini, P.
[6] Meddi, F.
[7] Mittiga, A.
[8] Salvini, G.
来源：
Aglietti, U. | 1600年 / 115期
关键词：
Hydrogenated Amorphous Silicon - Ionizing Particle Detectors - Numerical Simulation - P-I-N Junctions;
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