Optical properties of strained AlGaN and GaInN on GaN

被引：0

作者：

Takeuchi, Tetsuya ^{[1
]}

Takeuchi, Hideo ^{[1
]}

Sota, Shigetoshi ^{[1
]}

Sakai, Hiromitsu ^{[1
]}

Amano, Hiroshi ^{[1
]}

Akasaki, Isamu ^{[1
]}

机构：

[1] Meijo Univ, Nagoya, Japan

来源：

| 1997年 / JJAP, Minato-ku, Japan卷 / 36期

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摘要：

The composition of alloys in strained ternary alloy layers, AlxGa1-xN (01-xInxN (0<x<0.20), on thick GaN was precisely determined using the high-resolution X-ray diffraction profile. The band gap of strained AlGaN is found to increase almost linearly according to the AlN molar fraction, while that of strained GaInN has a large bowing parameter of 3.2 eV.

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