Theory of activated conduction in a Si single-electron transistor

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作者：
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan [1 ]
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来源：
Microelectron Eng | / 1卷 / 205-207期
关键词：
Activation energy - Electric potential - Heterojunctions - Semiconducting gallium arsenide - Semiconducting silicon - Semiconductor quantum dots;
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摘要：
Transport in a silicon single-electron transistor is theoretically studied. By solving a master equation, assuming that the potential barrier has a parabolic potential, we show that the linear conductance has an activated behavior at high temperatures. This result is in quantitative agreement with a recent experimental observation.
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