Improved emitter-base junction with In2O3 in dielectric-base transistor

被引：0

作者：

Hato, Tsunehiro ^{[1
]}

Takauchi, Hideki ^{[1
]}

Yoshida, Akira ^{[1
]}

Tamura, Hirotaka ^{[1
]}

Fujimaki, Norio ^{[1
]}

Oshima, Yoshifumi ^{[1
]}

Yokoyama, Naoki ^{[1
]}

机构：

[1] Fujitsu Ltd, Atsugi, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 12 A期

关键词：

Current density - Deposition - Dielectric devices - Diodes - Electrodes - Fabrication - Heterojunctions - Laser ablation - Magnesia - Oxide superconductors - Transmission electron microscopy - X ray diffraction;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：6379 / 6381

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