IDENTIFICATION OF THE 'EL2 FAMILY' MIDGAP LEVELS IN GaAs.

被引：0

作者：

Ikoma, Toshiaki ^{[1
]}

Mochizuki, Yasunori ^{[1
]}

机构：

[1] Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1985年 / 24卷 / 12期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：935 / 937

共 50 条

[21] EL2 DEFECT IN GAAS
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[22] ELECTRICAL ACTIVATION OF SILICON IMPLANTED IN SEMIINSULATING GAAS - ROLE OF BORON AND THE MIDGAP ELECTRON TRAP (EL2)
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[23] ROOM-TEMPERATURE CHARACTERIZATION OF MIDGAP LEVEL (EL2) IN GAAS DIODES WITHOUT METALLIZATION PROCESSES
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[24] COMMENT ON IDENTIFICATION OF A DEFECT IN A SEMICONDUCTOR - EL2 IN GAAS - REPLY
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[27] ZERO-PHONON LINE ASSOCIATED WITH THE MIDGAP LEVEL EL2 IN GAAS - CORRELATION WITH THE ASGA ANTISITE DEFECT
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[28] SYMMETRY OF THE EL2 CENTER IN GAAS
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[29] On the energy level of EL2 in GaAs
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[30] METASTABLE STATE OF EL2 IN GAAS
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