Preparation and characterization of Fe-based III-V diluted magnetic semiconductor (Ga, Fe)As

被引：0

作者：

Haneda, Shigeru ^{[1
]}

Yamaura, Masaaki ^{[1
]}

Takatani, Yukihiro ^{[1
]}

Hara, Kazuhiko ^{[1
]}

Harigae, Shin-Ichi ^{[1
]}

Munekata, Hiroo ^{[1
]}

机构：

[1] Imaging Sci. and Eng. Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan

来源：

| 1600年 / JJAP, Tokyo卷 / 39期

关键词：

Iron - Lattice constants - Magnetic films - Magnetization - Molecular beam epitaxy - Paramagnetism - Secondary ion mass spectrometry - Semiconducting films - Semiconducting gallium arsenide - Semiconductor growth - X ray crystallography;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The Fe-based III-V diluted magnetic semiconductor (III-V-DMS), (Ga, Fe)As, has been grown successfully on GaAs(001) substrates by molecular beam epitaxy at a substrate temperature Ts ranging from 260-350 °C. Secondary ion mass spectroscopy analysis has exhibited that the film composition can be expressed by Ga1-xFexAs. X-ray diffraction data have indicated that the lattice constant of Ga1-xFexAs decreases with increasing Fe composition. Magnetization data have exhibited that epilayers are predominantly paramagnetic, however, their detailed behavior differs from that of Mn-based DMS systems. The work has demonstrated that the physical properties of III-V-DMS can be changed significantly by the choice of transition metals.

引用

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[21] LOCAL MN STRUCTURES IN III-V DILUTED MAGNETIC SEMICONDUCTOR (IN,MN)AS
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