Preparation and characterization of Fe-based III-V diluted magnetic semiconductor (Ga, Fe)As

被引：0
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作者：
Haneda, Shigeru [1 ]
Yamaura, Masaaki [1 ]
Takatani, Yukihiro [1 ]
Hara, Kazuhiko [1 ]
Harigae, Shin-Ichi [1 ]
Munekata, Hiroo [1 ]
机构：
[1] Imaging Sci. and Eng. Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
来源：
| 1600年 / JJAP, Tokyo卷 / 39期
关键词：
Iron - Lattice constants - Magnetic films - Magnetization - Molecular beam epitaxy - Paramagnetism - Secondary ion mass spectrometry - Semiconducting films - Semiconducting gallium arsenide - Semiconductor growth - X ray crystallography;
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摘要：
The Fe-based III-V diluted magnetic semiconductor (III-V-DMS), (Ga, Fe)As, has been grown successfully on GaAs(001) substrates by molecular beam epitaxy at a substrate temperature Ts ranging from 260-350 °C. Secondary ion mass spectroscopy analysis has exhibited that the film composition can be expressed by Ga1-xFexAs. X-ray diffraction data have indicated that the lattice constant of Ga1-xFexAs decreases with increasing Fe composition. Magnetization data have exhibited that epilayers are predominantly paramagnetic, however, their detailed behavior differs from that of Mn-based DMS systems. The work has demonstrated that the physical properties of III-V-DMS can be changed significantly by the choice of transition metals.
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