Low Frequency Noise of MOS Transistors - 2.

被引：0
|
作者：
Gentil, Pierre
机构：
来源：
| 1978年 / 58卷 / 10期
关键词：
SEMICONDUCTOR DEVICES; MIS;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
Experimental results of low-frequency noise obtained on MOS transistors validate certain points of the theory of noise, namely that: noise is inversely proportional to the channel surface; noise is proportional to the square of thickness of the oxide or the relatively thick oxides; noise is proportional to the total density of the interface states.
引用
收藏
页码：645 / 652
相关论文
共 46 条
  • [41] EXPERIMENTAL INVESTIGATION OF A MILLIMETER BAND FREQUENCY CONVERTER ON n-InSb at 4. 2 degree K.
    Voronenko, V.P.
    Vystavkin, A.N.
    Zyabrev, B.G.
    Navrotskiy, V.I.
    Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1972, 17 (08): : 1287 - 1992
  • [42] High performance AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors fabricated using SiN/SiO2/SiN triple-layer insulators
    Endoh, Akira
    Yamashita, Yoshimi
    Hirose, Nobumitsu
    Hikosaka, Kohki
    Matsui, Toshiaki
    Hiyamizu, Satoshi
    Mimura, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3364 - 3367
  • [43] Effect of bottom SiN thickness for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors using SiN/SiO2/SiN triple-layer insulators
    Yamashita, Yoshimi
    Endoh, Akira
    Hirose, Nobumitsu
    Hikosaka, Kohki
    Matsui, Toshiaki
    Hiyamizu, Satoshi
    Mimura, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (24-28): : L666 - L668
  • [44] Development of n-MoO3@MoS2/p-Si heterostructure diode using pre-synthesized core@shell nanocomposite for efficient light harvesting detector application
    Gunasekaran, S.
    Marnadu, R.
    Thangaraju, D.
    Chandrasekaran, J.
    Hegazy, H. H.
    Somaily, H. H.
    Durairajan, A.
    Valente, M. A.
    Elango, M.
    Reddy, Vasudeva Reddy Minnam
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 135
  • [45] Enhancing thermal-mechanical performance of micron Ag/ZrW2O8 nanorod die-attach paste with low thermal expansion
    Xu, Yuxin
    Qiu, Xiaoming
    Wang, Suyu
    Huo, Fupeng
    Su, Yutai
    Xu, Long
    Ma, Ninshu
    Chen, Chuantong
    Suganuma, Katsuaki
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 996
  • [46] GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique
    Low, Rui Shan
    Asubar, Joel T.
    Baratov, Ali
    Kamiya, Shunsuke
    Nagase, Itsuki
    Urano, Shun
    Kawabata, Shinsaku
    Tokuda, Hirokuni
    Kuzuhara, Masaaki
    Nakamura, Yusui
    Naito, Kenta
    Motoyama, Tomohiro
    Yatabe, Zenji
    APPLIED PHYSICS EXPRESS, 2021, 14 (03)
12345