Low Frequency Noise of MOS Transistors - 2.

被引：0
|
作者：
Gentil, Pierre
机构：
来源：
| 1978年 / 58卷 / 10期
关键词：
SEMICONDUCTOR DEVICES; MIS;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
Experimental results of low-frequency noise obtained on MOS transistors validate certain points of the theory of noise, namely that: noise is inversely proportional to the channel surface; noise is proportional to the square of thickness of the oxide or the relatively thick oxides; noise is proportional to the total density of the interface states.
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收藏
页码：645 / 652
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