Valence-Band Discontinuity at the AIN/Si Interface

被引：0

作者：

Ishikawa, Hiroyasu ^{[1
]}

Zhang, Baijun ^{[1
]}

Egawa, Takashi ^{[1
]}

Jimbo, Takashi ^{[2
]}

机构：

[1] Res. Ctr. for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

[2] Dept. of Environmental Technology, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 10期

关键词：

Aluminum nitride - Electric potential - Electric resistance - Gallium nitride - Light emitting diodes - Metallorganic chemical vapor deposition - Ohmic contacts - Silicon - X ray photoelectron spectroscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.

引用

页码：6413 / 6414