Process Control by Parameter Measurements of LSI Wafers.

被引:0
|
作者
Vernon, N.B.
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
A new generation of parameter testing equipment is reported that features speed and accuracy. The inherent software and computer performance of these systems contribute to the production of invariably high-quality devices. The program wing, using the programming language PASCAL, is simple because it is easily readable, can be simply written, and is self-documentable. An example for parameter testing concerned with the measurement of resistance is illustrated.
引用
收藏
页码:626 / 629
相关论文
共 50 条
  • [41] Chapter 4 Photomodulated Thermoreflectance Investigation of Implanted Wafers. Annealing Kinetics of Defects
    Christofides, Constantinos
    Semiconductors and Semimetals, 1997, 46 (0C): : 115 - 150
  • [42] The effect of integration of Strontium-Bismuth-Tantalate capacitors onto SOI wafers.
    Joshi, V
    Ohno, M
    Ida, J
    Nagatomo, Y
    Strauss, K
    2005 IEEE International SOI Conference, Proceedings, 2005, : 128 - 129
  • [43] Fast and accurate isothermal measurements on process-split wafers
    Chan, J
    Marathe, A
    Pham, V
    2001 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2001, : 89 - 90
  • [44] NEUTRON ACTIVATION ANALYSIS AND AUTORADIOGRAPHIC PURITY EXAMINATION OF SEMICONDUCTORS GRADE SILICON WAFERS.
    Jaskolska, M.
    Walis, L.
    Rowinska, L.
    Electron Technology (Warsaw), 1975, 8 (3-4): : 109 - 117
  • [45] LATTICE BENDING IN LEC-GROWN SEMI-INSULATING GaAs WAFERS.
    Yasuami, Shigeru
    Mikami, Hitoshi
    Hojo, Akimichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1983, 22 (10): : 1567 - 1569
  • [46] NEW NON-CONTACT METHOD TO MEASURE TEMPERATURE OF THE SURFACE OF SEMICONDUCTOR WAFERS.
    Tomita, Takashi
    Kinosada, Toshiaki
    Yamashita, Tatuya
    Shiota, Masahiro
    Sakurai, Takeshi
    1600, (25):
  • [47] Silicon nanowires catalyzed at high temperatures by Co nanoparticles deposited on Si wafers.
    Guo, T
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2004, 228 : U539 - U539
  • [48] MICROWAVE PERFORMANCE OF GaAs PBT's FABRICATED FROM MO-CVD WAFERS.
    Takanashi, Yoshifumi
    Asai, Hiromitsu
    Ando, Seigo
    Sugiura, Hideo
    Honda, Takashi
    Susa, Nobuhiko
    Japanese Journal of Applied Physics, Part 2: Letters, 1986, 25 (02): : 111 - 113
  • [49] Electrochemical treatment of wastewater generated from chemical mechanical planarization of silicon wafers.
    Raghavan, S
    Tamilmani, S
    Farrell, J
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U530 - U530
  • [50] Parameter choice for process control
    Schroeder, E.D.
    Irvine, R.L.
    1979, 105 (2 EE2): : 217 - 229