Study of sputtered barium strontium titanate and strontium titanate thin films

被引：0

作者：

Baumert, B.A. ^{[1
]}

Chang, L.-H. ^{[1
]}

Matsuda, A.T. ^{[1
]}

Tsai, T.-L. ^{[1
]}

Tracy, C.J. ^{[1
]}

Gregory, R.B. ^{[1
]}

Fejes, P.L. ^{[1
]}

Cave, N.G. ^{[1
]}

Chen, W. ^{[1
]}

Remmel, T. ^{[1
]}

Taylor, D.J. ^{[1
]}

Otsuki, T. ^{[1
]}

Fujii, E. ^{[1
]}

Hayashi, S. ^{[1
]}

Suu, K. ^{[1
]}

机构：

[1] Motorola Semiconductor Products, Sector, Mesa, United States

来源：

Integrated Ferroelectrics | 1997年 / 17卷 / 1 -4 pt 1期

关键词：

Barium compounds - Capacitance - Current density - Ferroelectric materials - Grain size and shape - Lattice constants - Leakage currents - Permittivity - Sputtering - Strontium compounds - Thermal effects - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Sputtered Ba1-xSrxTiO3 (BST) and SrTiO3 (STO) films and capacitors made with these dielectrics have been characterized with respect to physical and electrical properties. Specific capacitance values included a high of 120 fF/μm2 for BST films deposited at 600 °C and a high of 27 fF/μm2 for STO films deposited at 450 °C. Leakage current densities at 3.3 V for the most part varied from mid 10-8 to mid 10-6 amps/cm2. All of the dielectrics are polycrystalline, although the lowest temperature STO films have a nearly amorphous layer which impacts their capacitance. Grain size increases with deposition temperature, which correlates to higher dielectric constants. The lattice parameter of the BST films is larger than that of bulk samples. Capacitance, leakage, breakdown, and lifetime results are reported.

引用

页码：165 / 178