PROTON AND HEAVY-ION RADIATION DAMAGE STUDIES IN MOS TRANSISTORS.

被引：0
作者：
Stapor, W.J. [1 ]
August, L.S. [1 ]
Wilson, D.H. [1 ]
Oldham, T.R. [1 ]
Murray, K.M. [1 ]
机构：
[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
来源：
IEEE Transactions on Nuclear Science | 1985年 / NS-32卷 / 06期
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