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- [2] LOW-TEMPERATURE EPITAXIAL-GROWTH OF A1N FILMS ON SAPPHIRE BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED CHEMICAL-VAPOR DEPOSITIONJOURNAL OF CRYSTAL GROWTH, 1993, 130 (1-2) : 308 - 312ZHANG, WSOMENO, YSASAKI, MHIRAI, T
- [3] ROLE OF OXYGEN IN THE ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FILMSJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1993, 11 (04): : 1875 - 1880YOUCHISON, DLEDDY, CRSARTWELL, BD
- [4] Low-temperature epitaxial growth of Si by electron cyclotron resonance chemical vapor depositionTHIN SOLID FILMS, 2001, 381 (01) : 22 - 30Platen, JSelle, BSieber, IBrehme, SZeimer, UFuhs, W
- [5] LOW-TEMPERATURE HOMOEPITAXIAL GROWTH OF SI BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1995, 67 (07) : 971 - 973ROGERS, JLANDRY, PSVARHUE, WJMCGAUGHNEA, PADAMS, EKONTRA, R
- [6] PREPARATION OF TURBOSTRATIC AND CUBIC BORON-NITRIDE FILMS BY ELECTRON-CYCLOTRON-RESONANCE, PLASMA-ASSISTED, CHEMICAL-VAPOR-DEPOSITIONJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1994, 5 (06) : 324 - 328GOTO, TTANAKA, TMASUMOTO, HHIRAI, T
- [7] LOW-TEMPERATURE EPITAXIAL SILICON FILM GROWTH USING HIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITIONAPPLIED PHYSICS LETTERS, 1995, 66 (19) : 2528 - 2530DEBOER, SJDALAL, VLCHUMANOV, GBARTELS, R
- [9] PREPARATION OF EPITAXIAL ALN FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION ON IR-COATED AND PT-COATED SAPPHIRE SUBSTRATESAPPLIED PHYSICS LETTERS, 1994, 64 (11) : 1359 - 1361ZHANG, WVARGAS, RGOTO, TSOMENO, YHIRAI, T
- [10] Epitaxial growth of InN by plasma-assisted metalorganic chemical vapor depositionJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (5B): : L595 - L597Sato, M
