EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF BOND LENGTHS IN GaAs1 - xPx.

被引：0

作者：

Sasaki Toru ^{[1
]}

Onda, Tomohiro ^{[1
]}

Ito, Ryoichi ^{[1
]}

Ogasawara, Nagaatsu ^{[1
]}

机构：

[1] Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1986年 / 25卷 / 02期

关键词：

SPECTROSCOPY; ABSORPTION; -; Applications; X-RAY;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Extended X-ray-absorption fine-structure measurements were performed on GaAs//1// minus //xP//x, a typical III-V-V type semiconductor alloy, with the composition x as a parameter. The results reveal that the Ga-As and Ga-P nearest-neighbor bond lengths differ, showing a tendency to retain their respective bond lengths in the binary compounds. This feature is similar to that found earlier in Ga//1// minus //xIn//xAs, a III-III-V type alloy.

引用

页码：231 / 233

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