EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF BOND LENGTHS IN GaAs1 - xPx.

被引:0
|
作者
Sasaki Toru [1 ]
Onda, Tomohiro [1 ]
Ito, Ryoichi [1 ]
Ogasawara, Nagaatsu [1 ]
机构
[1] Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1986年 / 25卷 / 02期
关键词
SPECTROSCOPY; ABSORPTION; -; Applications; X-RAY;
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中图分类号
学科分类号
摘要
Extended X-ray-absorption fine-structure measurements were performed on GaAs//1// minus //xP//x, a typical III-V-V type semiconductor alloy, with the composition x as a parameter. The results reveal that the Ga-As and Ga-P nearest-neighbor bond lengths differ, showing a tendency to retain their respective bond lengths in the binary compounds. This feature is similar to that found earlier in Ga//1// minus //xIn//xAs, a III-III-V type alloy.
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页码:231 / 233
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