Accumulation and annealing of radiation defects and instability of nickel-silicon alloys

被引：0

作者：

Arbuzov, V.A. ^{[1
]}

Danilov, S.E. ^{[1
]}

Druzhkov, A.P. ^{[1
]}

机构：

[1] Inst Fiziki Metallov UrO RAN, Ekaterinburg, Russia

来源：

Fizika Metallov i Metallovedenie | 1994年 / 78卷 / 02期

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Interstitials;

D O I：

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中图分类号：

学科分类号：

摘要：

引用

页码：113 / 118

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[31] INFLUENCE OF DISLOCATIONS ON ACCUMULATION OF RADIATION DEFECTS IN SILICON
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (01): : 70 - 73
[32] ELECTRODEPOSITION OF NICKEL TITANIA, AND NICKEL-SILICON CARBIDE COMPOSITES.
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[33] ENERGY CHANGES IN MAGNETIZATION OF A NICKEL-SILICON ALLOY
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[34] THE EFFECT OF ANNEALING ON THE SPATIAL DISTRIBUTION OF RADIATION DEFECTS IN SILICON
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[35] Annealing of radiation defects in dual-implanted silicon
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[36] KINETICS OF FORMATION AND ANNEALING OF RADIATION DEFECTS ON SURFACE OF SILICON
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[37] RADIATION ANNEALING OF DEFECTS IN NEUTRON-BOMBARDED SILICON
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[38] EARLY STAGES OF IRRADIATION INDUCED GAMMA-' PRECIPITATION IN PROTON IRRADIATED NICKEL-SILICON ALLOYS
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[39] INFLUENCE OF DISLOCATIONS ON ACCUMULATION OF RADIATION DEFECTS IN SILICON.
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[40] INFLUENCE OF IRRADIATION INTENSITY ON ACCUMULATION OF RADIATION DEFECTS IN SILICON
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