Characterization of the silicon on insulator film in bonded wafers by high resolution X-ray diffraction

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IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States [1 ]
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Appl Phys Lett | / 6卷 / 787-789期
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Crystal orientation - Electromagnetic wave diffraction - Ion implantation - Light interference - Nondestructive examination - Oxygen - Semiconducting films - Silicon wafers - Substrates - Transmission electron microscopy - X ray crystallography;
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