Annealing properties of open volumes in HfSiOx and HfAlO x gate dielectrics studied using monoenergetic positron beams

被引：0

作者：

Uedono, A. ^{[1
,3
]}

Ikeuchi, K. ^{[1
]}

Yamabe, K. ^{[1
,3
]}

Ohdaira, T. ^{[2
]}

Muramatsu, M. ^{[2
]}

Suzuki, R. ^{[2
]}

Hamid, A.S. ^{[3
]}

Chikyow, T. ^{[3
]}

Torii, K. ^{[4
]}

Yamada, K. ^{[3
,5
]}

机构：

[1] Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

[2] National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

[3] Nanomaterials Laboratory, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan

[4] Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

[5] Nano Technology Research Laboratory, Waseda University, 513, Waseda-Tsurumaki, Shinjuku, Tokyo 16-0041, Japan

来源：

Journal of Applied Physics | 2005年 / 98卷 / 02期

关键词：

Number:; -; Acronym:; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;

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