Emission from quantum-well inGaAs structures

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Centre for High-Technology Materials, University of New Mexico, Albuquerque, NM, United States ^{[1
]}

不详 ^{[2
]}

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Quantum Electron. | / 3卷 / 198-202期

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摘要：

An experimental investigation was made of the spontaneous emission spectra of InGaAs laser structures based on strained quantum wells. The density of the injection current was up to [similar to] 9.2 kA cm-2 and the investigation was carried out in the temperature range 4.2-286 K. The energy of the emitted photons was 1.2-1.5 eV. The spectrum was dominated by the 1e-1hh transition and the peak representing this transition was practically independent of the current. There was no evidence of the 'red' shift predicted by the many-body theory for high carrier concentrations. Weak forbidden transitions (1e-2hh, etc.) were identified. The long-wavelength edge of the emission band varied exponentially in accordance with the familiar Urbach rule for the absorption edge.

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