Equations provide accurate GaAs MESFET modeling

被引：0

作者：

Rousseau, Kenneth V. ^{[1
]}

机构：

[1] Vitesse Semiconductor Corp, Camarillo, United States

来源：

Microwaves & RF | 1991年 / 30卷 / 11期

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摘要：

引用

共 50 条

[21] QUASI-TWO-DIMENSIONAL MODELING OF GaAs MESFET'S.
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[22] Modeling optical response of the GaAs MESFET using PSpice circuit simulator
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[23] Modeling of optoelectronic switch with PIN photodiode and GaAs MESFET transmission gate
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[24] NONLINEAR GAAS-MESFET MODELING USING PULSED GATE MEASUREMENTS
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[29] Neural network modeling of GaAs IC material and MESFET device characteristics
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[30] 高输出GaAs MESFET
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